DESIGN,IMPLEMENTATION AND VERIFICATION OF C-BAND GAAS MESFET OSCILLATOR | ||||
| The International Conference on Electrical Engineering | ||||
| Article 36, Volume 2, 2nd International Conference on Electrical Engineering ICEENG 1999, November 1999, Page 346-355 PDF (1.54 MB) | ||||
| Document Type: Original Article | ||||
| DOI: 10.21608/iceeng.1999.62518 | ||||
 View on SCiNiTO | ||||
| Authors | ||||
| ABDALLA M. I.1; MOSELHY A. M.2; ABDEL-NAZEER A.3; MAGHAWRY M.4 | ||||
| 1Associate Professor, Comm. Department, Zagazig University, Zagazig, Egypt. | ||||
| 2Ph. D., Comm. Department, Zagazig University, Zagazig, Egypt. | ||||
| 3Ph. D., Armed Forces, Egypt. | ||||
| 4Graduate student, Armed Forces, Egypt. | ||||
| Abstract | ||||
| In this paper, the Gain Saturation Approximation method is used for the design of a 4.5 GHz GaAs MESFET Oscillator. This method is based on S-Parameter simulation of the initial oscillator topology including the transistor model. A computer-aided-design was employed for optimizing and simulating the designed circuit to obtain the conditions of oscillation. To verify this work, the optimized circuit is fabricated, by using microstrip technology, and measured. The optimized circuit is also simulated using MDS program. Good agreement between simulation and measurement is obtained. | ||||
| Keywords | ||||
| microwave; Microstrip; Oscillator; CAD; and C-band | ||||
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