Simulation of Single–Electron Transistor Circuits Using “VHDL-AMS” Model
El-Shaer, A., Nasser, A., Hamdy, N. (2010). Simulation of Single–Electron Transistor Circuits Using “VHDL-AMS” Model. EKB Journal Management System, 20(1), 1-10. doi: 10.21608/mjeer.2010.63814
A. M. El-Shaer; A. A. A. Nasser; N. Hamdy. "Simulation of Single–Electron Transistor Circuits Using “VHDL-AMS” Model". EKB Journal Management System, 20, 1, 2010, 1-10. doi: 10.21608/mjeer.2010.63814
El-Shaer, A., Nasser, A., Hamdy, N. (2010). 'Simulation of Single–Electron Transistor Circuits Using “VHDL-AMS” Model', EKB Journal Management System, 20(1), pp. 1-10. doi: 10.21608/mjeer.2010.63814
El-Shaer, A., Nasser, A., Hamdy, N. Simulation of Single–Electron Transistor Circuits Using “VHDL-AMS” Model. EKB Journal Management System, 2010; 20(1): 1-10. doi: 10.21608/mjeer.2010.63814

Simulation of Single–Electron Transistor Circuits Using “VHDL-AMS” Model

Menoufia Journal of Electronic Engineering Research
Article 1, Volume 20, Issue 1, January 2010, Page 1-10  XML
Document Type: Original Article
DOI: 10.21608/mjeer.2010.63814
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Authors
A. M. El-Shaer1; A. A. A. Nasser2; N. Hamdy2
1Alexandria Institute of Engineering and Technology, Alexandria, Egypt
2Arad Academy for Science, Technology and Maritime Transport, Alexandria, Egypt.
Abstract
This paper presents a VHDL-AMS model for the simulation ofsingle-electron transistor (SETs) using VHDL-AMS (Very High speed Descriptive Language-Analogue and Mixed signal). The model is based on the SPICE macro-model. From the SPICE macro-model simple relations were derived which are suitable for VHDL-AMS. The proposed model can fully analyze the circuits containing analogue and digital applications with the advantage of concurrency of VHDL-AMS systems. The proposed model can describe the IDS-VDS characteristics ofSET and is applied to a Single-Electron NOR gate circuit. The resulting voltage transfer characteristics agreed with the results obtained from the SPICE macro-model. The model overcomes the difficulties associated with other techniques based on Monte-Carlo simulation
Keywords
VHDL-AMS; single-electron transistor; SPICE macro-model; island; IDS-VDS characteristics
References
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