Memristor Overview up to 2015 | ||||
| Menoufia Journal of Electronic Engineering Research | ||||
| Article 5, Volume 24, Issue 1, 2015, Page 79-106 | ||||
| Document Type: Original Article | ||||
| DOI: 10.21608/mjeer.2015.64132 | ||||
 View on SCiNiTO | ||||
| Authors | ||||
| Sherif F. Nafea1; Ahmed A.S. Dessouki2; S. El-Rabaie3 | ||||
| 1Dept of Elect Eng., Fac. of Eng., Ismailia, Suez Canal Univ., Egypt. | ||||
| 2Dept. of Elect Eng., Fac. of Eng., Port Said, Port Said Univ., Egypt | ||||
| 3Dept. of Electronics andElectrical Communications, Faculty of Electronic Engineering, Menoufia University, Menouf, Egypt | ||||
| Abstract | ||||
| Until 1971, the known three fundamental electrical elements were resistor, inductor, and capacitor. In 1971, Professor Leon Chua proposed theoretically a fourth fundamental electric element, and he called it “Memristor.” Memristor is a twoterminal element whose resistance depends on the magnitude, direction, and duration of the applied voltage. This element is realized later by HP labs in 2008, which opened a wide area of research on the memristor and its possible applications. This paper gives an overview of the device properties, fabrication, modeling approaches of the memristor and some possible future improvements. The paper also surveys the digital and analog applications of memristors, and possible future improvements in some applications | ||||
| References | ||||
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