Temporal Response of MSM-LED Optical Integrated Device | ||||
| Menoufia Journal of Electronic Engineering Research | ||||
| Article 2, Volume 21, Issue 1, January 2011, Page 73-82 | ||||
| Document Type: Original Article | ||||
| DOI: 10.21608/mjeer.2011.66807 | ||||
 View on SCiNiTO | ||||
| Authors | ||||
| Sh. M. Eladl; M. A. Ashour | ||||
| Radiation Eng. Dept., NCRRT, P.O. Box 29, Nasr City, Atomic Energy Authority, Egypt | ||||
| Abstract | ||||
| In this paper, the temporal response of an optical integrated device is theoretically analysed. The device is composed of a Metal-Semiconductor-Metal (MSM) Photodetector and a Light Emitting diode (LED). The analysis is based on the frequency response of the constituent devices without any optical feedback within the device structure. All expressions describing the frequency response, time response, output derivatives, and rise time are outlined. The results show that the temporal response of MSM detectors is similar to the LED response if the cutoff frequency of the LED is lower than that of MSM, while it is similar to MSM detector if the cutoff frequency of the MSM is lower than that of LED. | ||||
| References | ||||
|
[1] Miao, C.; Lu, H.; Du, X.Z.; Li, Y.; Zhang, R.; Zheng, Y.D. "InGaN/GaN multi-quantum-well planar metal-semiconductor-metal light-emitting diodes" Electronics Letters, Volume 44, Issue 6, March 13, Page(s):441 - 442 2008.
[2] Su, Y.K.; Chen, W.R.; Chang, S.J.; Juang, F.S.; Lan, W.H.; Lin, A.C.H.; Chang, H., " The red shift of ZnSSe metal-semiconductor-metal light emittingdiodes with high injection currents", IEEE Transactions on Electron Devices, Volume 47, Issue 7, Page(s):1330 – 1333, Jul 2000.
[3] X. Chen, “The research and fabrication of GaN-based materials and MSM UV-photodetectors” Master’s Degree Thesis (XiamenUniversity, 2002) p.23.
[4] L. Liu, “Study of ohmic contact and MSM UV detector based on GaN” Master’s Degree Thesis (Zhejiang Uni- versity, 2004) p.43.
[5] J. Zhang, Y. Yang, Y. Lu, L. Lou, and Y. Zhao, Chinese J. Lasers (in Chinese) 35, 509 (2008).
[6] M. Mosca, J.-L. Reverchon, N. Grandjean, and J.-Y. Duboz, IEEE J. Sel. Top. Quantum Electron. 10, 752 (2004).
[7] Z. Wu, X. Xin, F. Yan, and J. Zhao, Chin. J. Quantum Electron. (in Chinese) 21, 269 (2004).
[8] Anthony W. Sarto and Bart J. Van Zeghbroeck “Photocurrents in a Matal-semiconductor-Metal Photodetector” J. of Quantum Electronics, Vol. 33,, Dec. 1997.. | ||||
|
Statistics Article View: 110 |
||||
