Design of Low Noise-Low Power OTA Using 0.13μm Technology for Infrared Readout Circuits
M., M., El-Mahlawy, M., Zaki, A., Hamid, M. (2014). Design of Low Noise-Low Power OTA Using 0.13μm Technology for Infrared Readout Circuits. EKB Journal Management System, 9(9th International Conference on Electrical Engineering ICEENG 2014), 1-6. doi: 10.21608/iceeng.2014.30492
M. Rafat M.; Mohamed H. El-Mahlawy; A. H. Zaki; M. S. Hamid. "Design of Low Noise-Low Power OTA Using 0.13μm Technology for Infrared Readout Circuits". EKB Journal Management System, 9, 9th International Conference on Electrical Engineering ICEENG 2014, 2014, 1-6. doi: 10.21608/iceeng.2014.30492
M., M., El-Mahlawy, M., Zaki, A., Hamid, M. (2014). 'Design of Low Noise-Low Power OTA Using 0.13μm Technology for Infrared Readout Circuits', EKB Journal Management System, 9(9th International Conference on Electrical Engineering ICEENG 2014), pp. 1-6. doi: 10.21608/iceeng.2014.30492
M., M., El-Mahlawy, M., Zaki, A., Hamid, M. Design of Low Noise-Low Power OTA Using 0.13μm Technology for Infrared Readout Circuits. EKB Journal Management System, 2014; 9(9th International Conference on Electrical Engineering ICEENG 2014): 1-6. doi: 10.21608/iceeng.2014.30492

Design of Low Noise-Low Power OTA Using 0.13μm Technology for Infrared Readout Circuits

The International Conference on Electrical Engineering
Article 65, Volume 9, 9th International Conference on Electrical Engineering ICEENG 2014, May 2014, Page 1-6  XML PDF (416.24 K)
Document Type: Original Article
DOI: 10.21608/iceeng.2014.30492
View on SCiNiTO View on SCiNiTO
Authors
M. Rafat M.1; Mohamed H. El-Mahlawy2; A. H. Zaki1; M. S. Hamid1
1Electronic Engineering Department MTC Cairo, Egypt.
2Biomedical Engineering Department MTC Cairo, Egypt.
Abstract
This paper presents the design of operational transconductance amplifier (OTA) as a core building block of the
capacitive transimpedance amplifier (CTIA) for the implementation of infrared readout circuit on VLSI chips. The OTA has a two-stage amplifier which achieves low power and low noise. In addition, a voltage reference is designed for biasing the
amplifier. Low power dissipation of the OTA is achieved by using of a supply voltage of 1.2 V and transistors operating in the subthreshold region. The designed OTA, built in standard 0.13 μm CMOS technology, dissipates 3.2 μW of power with input referred noise of 52.1 nV/√Hz@1KHz. Also, the OTA has a common mode rejection ratio of 81 dB and input offset voltage of 5.089 μV. This is accomplished by the efficient sizing of the used transistors together with a compensation capacitor.
Keywords
OTA; CTIA; Low noise; Subthreshold
Statistics
Article View: 162
PDF Download: 845