Design of Low Noise-Low Power OTA Using 0.13μm Technology for Infrared Readout Circuits | ||||
The International Conference on Electrical Engineering | ||||
Article 65, Volume 9, 9th International Conference on Electrical Engineering ICEENG 2014, May 2014, Page 1-6 PDF (416.24 K) | ||||
Document Type: Original Article | ||||
DOI: 10.21608/iceeng.2014.30492 | ||||
View on SCiNiTO | ||||
Authors | ||||
M. Rafat M.1; Mohamed H. El-Mahlawy2; A. H. Zaki1; M. S. Hamid1 | ||||
1Electronic Engineering Department MTC Cairo, Egypt. | ||||
2Biomedical Engineering Department MTC Cairo, Egypt. | ||||
Abstract | ||||
This paper presents the design of operational transconductance amplifier (OTA) as a core building block of the capacitive transimpedance amplifier (CTIA) for the implementation of infrared readout circuit on VLSI chips. The OTA has a two-stage amplifier which achieves low power and low noise. In addition, a voltage reference is designed for biasing the amplifier. Low power dissipation of the OTA is achieved by using of a supply voltage of 1.2 V and transistors operating in the subthreshold region. The designed OTA, built in standard 0.13 μm CMOS technology, dissipates 3.2 μW of power with input referred noise of 52.1 nV/√Hz@1KHz. Also, the OTA has a common mode rejection ratio of 81 dB and input offset voltage of 5.089 μV. This is accomplished by the efficient sizing of the used transistors together with a compensation capacitor. | ||||
Keywords | ||||
OTA; CTIA; Low noise; Subthreshold | ||||
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