Finite-Difference Time-Domain Analysis and Design of Transition Interconnects in Microstrip-to-Microstrip Package | ||||
The International Conference on Electrical Engineering | ||||
Article 17, Volume 7, 7th International Conference on Electrical Engineering ICEENG 2010, May 2010, Page 1-17 PDF (354.55 K) | ||||
Document Type: Original Article | ||||
DOI: 10.21608/iceeng.2010.32957 | ||||
View on SCiNiTO | ||||
Author | ||||
Hussein H. M. Ghouz | ||||
College of Engineering, Arab Academy for Science, Technology and Maritime Transport, Cairo, Egypt. | ||||
Abstract | ||||
In this paper, a new transition between GaAs chip (Microstrip) and Aluminum motherboard (Microstrip) with a single interconnect and one common ground has been analyzed and investigated using Finite-Difference Time-Domain method. The objective is to optimize the package performance over a wide frequency band up to 50 GHz. This is carried out by performing a parametric analysis to study the effects of the transition interconnect (discontinuity) on the overall package performance. The scattering parameters of interconnect are used as a performance measure of package under investigation. Good results have been obtained up 50 GHz; S12/ S21 and S11/S22 are about -0.4 and -20 dB respectively. | ||||
Keywords | ||||
High frequency interconnects in MMIC packages; finite-difference time-domain "FDTD"; and Flip-Chip | ||||
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