Modeling of Current-Voltage Characteristics of Deep Submicron MOSFET | ||||
| The International Conference on Electrical Engineering | ||||
| Article 30, Volume 5, 5th International Conference on Electrical Engineering ICEENG 2006, May 2006, Page 1-9 PDF (146.61 K) | ||||
| Document Type: Original Article | ||||
| DOI: 10.21608/iceeng.2006.33554 | ||||
 View on SCiNiTO | ||||
| Authors | ||||
| AL-Kabbani, A. S. S.1; Hassan, M. F. M.2; Serag El-Deen, M.1 | ||||
| 1Faculty of Engineering, Al-Azhar University. | ||||
| 2Higher Institute of Technology, Benha University. | ||||
| Abstract | ||||
| ABSTRACT One of the deficiencies of many MOSFET models is that they are regional and can have discontinuities at the boundaries between regimes. This causes problems for deriving the conductance in circuit simulation. In this paper, a physical one-dimensional MOSFET model is developed. Discontinuities between linear and saturation regimes are avoided using one-region closed-form equation for the drain current. The strong inversion current-voltage (I-V) characteristics for submicron nchannel MOSFET which is suitable for circuit simulation and rapid process characterization are presented. The model is also suitable as a starting solution for two-dimensional numerical modeling. The resulting drain current is continuous over the entire operating range of the transistor. The calculated drain current is in agreement with publishing data using similar approaches. | ||||
| Keywords | ||||
| MOSFET; Current-voltage characteristics; Submicron semiconductor devices | ||||
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