Nano-structures and luminescence mechanisms of InGaN/GaN multiple quantum well light emitting diodes | ||||
| The International Conference on Electrical Engineering | ||||
| Article 80, Volume 6, 6th International Conference on Electrical Engineering ICEENG 2008, May 2008, Page 1-6 PDF (349.98 K) | ||||
| Document Type: Original Article | ||||
| DOI: 10.21608/iceeng.2008.34323 | ||||
 View on SCiNiTO | ||||
| Author | ||||
| Zhe Chuan FENG | ||||
| Institute of Photonics & Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan 106-17, ROC. | ||||
| Abstract | ||||
| Abstract: A series of InGaN/GaN MQW LEDs were prepared by low pressure metalorganic chemical vapor deposition (MOCVD) and studied on the nano-structural features correlated with optical properties, and luminescence emission mechanisms by analytical techniques of photoluminescence (PL), PL excitation (PLE), time resolved PL (TRPL), high-resolution (HR) X-ray diffraction (XRD) and HR transmission electron microscopy (TEM). They have shown the excellent optical and structural properties, evidenced by HRXRD, HRTEM and optical measurements. The quantum dot like structure features, unique T-behaviors of PL spectra, quantum confined Stokes effect, TRPL exploration with the variation of detecting energy and temperature and modeling analyses are studied and discussed. | ||||
| Keywords | ||||
| InGaN/GaN; MQW; LED; MOCVD; XRD; TEM; photoluminescence; time-resolved | ||||
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