Characterization and modeling of novel large gate periphery InGaAs/ InAlAs pHEMT for ultra low noise radio astronomy applications | ||||
| The International Conference on Electrical Engineering | ||||
| Article 82, Volume 6, 6th International Conference on Electrical Engineering ICEENG 2008, May 2008, Page 1-7 PDF (270.41 K) | ||||
| Document Type: Original Article | ||||
| DOI: 10.21608/iceeng.2008.34327 | ||||
 View on SCiNiTO | ||||
| Authors | ||||
| Ayman G. Sobih; Mohamed H. Abd El-Azeem | ||||
| Egyptian Armed Forces. | ||||
| Abstract | ||||
| Abstract: Novel high breakdown 1 μm strained gate InGaAs-InAlAs-InP pHEMTs with different gate periphery have been fabricated. Their DC, RF, and noise performances have been successfully characterized for investigating the optimum gate area for the best noise performance in the L-band. Extensive experimental device characterization together with numerical simulations using suitable linear and non-linear transistor models has been carried out for the new devices. Excellent agreements with experimental data were found on different transistor processes. DC, RF, and noise behaviours of the new devices were successfully modeled. | ||||
| Keywords | ||||
| modeling; pHEMT; InGaAs/InAlAs; Low noise | ||||
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