Effect of Rotation in a Semiconductor Medium Under Photothermal Theory with Ramp Type Heating | ||||
| Sohag Journal of Sciences | ||||
| Volume 9, Issue 3, September 2024, Page 325-333 PDF (885.25 K) | ||||
| Document Type: Regular Articles | ||||
| DOI: 10.21608/sjsci.2024.261815.1174 | ||||
 View on SCiNiTO | ||||
| Authors | ||||
A. M. Abd-Alla1; S. M. Abo-Dahab2; Doaa M. Salah  1; M. A. Abdelhafez 1
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| 1Department of Mathematics, Faculty of Science, Sohag University, Sohag 82524, Egypt | ||||
| 2Department of Mathematics, Faculty of Science, South Valley University, Qina, Egypt | ||||
| Abstract | ||||
| The goal of this work is to study the rotation of two-dimensional deformation in a semi-infinite semiconducting medium by ramp-type heating. The interaction of thermal-elastic mechanical-plasma waves is utilized in the photo-thermoelasticity theory model. The governing equations are presented in 2D and are of the thermal ramp type. The normal mode and approximation eigenvalue approaches have been applied to solve the given problem. The different physical quantities, such as displacement components, stress components, and the temperature distribution have been presented graphically using MATLAB software. These results were compared with previous results in the same direction, and it was found that the treatment method for the aforementioned problem may form a basis for examining the effects of rotation, angular frequency, time, and ramp-type heating parameter on a thermally elastic body. | ||||
| Keywords | ||||
| Ramp-type heating; photo-thermoelasticity; Normal mode; Eigenvalue approach | ||||
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